The floating-gate device has become an established component of all electronic systems, especially Non-volatile memories in recent years. This paper produces a study for this device including the structure and operation (read, program/write and erase). A complete flow which uses ATHENA, ATLAS and DEVEDIT3D tools for 2D and 3D structure simulations including I-V characteristics, Channel Hot Electron Injection, and Fowler-Nordheim Tunnel simulations are performed in TCAD environment.
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